jiangsu changjiang electronics technology co., l td dfnwb2x2-6l-u plastic-encap sulate mosfets www.cj-elec.com 1 c , jun ,2016 CJM7201 n-channel +p-channel mosfet fea ture application marking equivalent circuit dfnwb2 2-6 l -u ? surface mount package ? trenchfet power mosfet ? high density cell design for low r ds( o n) ? v o lt age cont rolled small signal switch ? rugg ed an d reliable ? high saturation current capability ? ? load switch for portable devices dc/dc converter absolute maximum ratings (t a =25 unless other w is e noted) parameter symbol value unit n-mosfet drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (not e 1) i d 0.115 a pulsed drain current (tp=10us) i dm 0.46 a p-mosfet drain-source voltage v ds -20 v gate-source voltage v gs 8 v continuous drain current (not e 1) i d -2.3 a pulsed drain current (tp=10us) i dm -10 a temperature and thermal resistance thermal resistance from junction to ambient (note 1) r ja 167 /w junction temperature t j 150 storage temperature t stg -55~+150 lead temperature for soldering purposes( 1/8?? from case for 10 s) t l 260 v (br)dss r ds(on) max i d 60v 7 ? @10v 0.115a 7 ? @5v -20v 112m ? @-4.5v -2.3a 142m ? @-2.5v
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